DMA2825

5G Ka-Band Power Amplifier Module

The DMA2825 is a high gain, high RF output power amplifier module (PAM) enabling 5G Ka-Band uplink (UL) and downlink (DL) TDD and full duplex (FD) transmitters, including BTS, HetNet, and user equipment (UE). Employing amplifier die manufactured on an advanced InP process, this high efficiency linear 50 Ω input/output (I/O) amplifier is ideal for low power dissipation and low distortion applications. Designed for use as an easily cascadable gain block, its gain flatness of better than ±0.5 dB within the LMDS A1 band make this part ideal for highly integrated MIMO and MA-MIMO applications. The part is available in a small outline, low profile SMT package.

Key Features
  • High Gain High Power 5G Ka-Band TDD Power Amplifier Module (PAM)
  • 25 dB Minimum Gain from 27.5 to 28.35 GHz
  • Gain Flatness ± 0.5 dB from 27.5 to 28.35 GHz
  • +27 dBm OP1dB (CW Tone)
  • +21 dBm Linear RF Power Output 
  • < 2% EVM RMS 256-QAM OFDMA Modulation 
  • Power Added Efficiency > 40% (+27 dBm OP1dB, 28 GHz)
  • OIP3 = +40 dBm @ 28 GHz
  • Single Power Supply Input (+3 Vdc)
  • Operating Current = 400 mA Typical (Pdiss ≈ 1.2 Wdc)
  • Advanced High Breakdown Voltage Indium Phosphide (InP) Power Amplifier Technology
  • Low Profile Air-Cavity QFN-12 3 x 3 x 1.2 mm Surface Mount Package
Applications
  • 5G Ka-Band HetNet Antenna Array Transmitter Elements
  • 5G Ka-Band Base Transceiver Station (BTS) Antenna Array Driver and Final Stage Transmitter Elements
  • 5G Ka-Band MA-MIMO Transceiver Modules

Want to learn more about this product or need an RFIC designed to your specifications?

Call 1.908.854.DUET (3838), email info@duetmicro.com or fill out our contact form to start the discussion.